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產品內容
Trimethylsilane / 3MS
Application
Trimethylsilane is used in CVD processes for depositing carbon doped silicate (CDS) low-k dielectric thin film with an oxidant precursor; typically, dielectric constant (k) from 2.7-3.1. It is adopted by many chip makers in their copper/low-k technologies with similar dielectric deposition tool sets. Using various process technologies, porous CDS low-k is also developed with reduced k values.
Product Specification
Purity 99.999%
Ar + O2 1
CO 2
CO2 1
N2 1
THC 2
H2O 1
Total-Cl 1
*ppm
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