更新時間：
產品內容
4-inch Sapphire Substrates
|
Item
|
Specification
|
Unit
|
| Material |
>99.99% Single Crystal Al2O3 |
|
| Orientation |
C-axis[0001] tiled M-axis 0.2 ± 0.1°
|
Degree
|
| Primary Flat |
A-Axis [11-20] ± 0.2°
|
Degree
|
| Diameter |
100 ± 0.25
|
mm
|
| Thickness |
650 ± 20
|
μm
|
| Flat Length |
31 mm ± 1
|
mm
|
| TTV |
≦ 20
|
um
|
| Bow |
-20 ~ 0
|
um
|
| Warp |
≦50
|
um
|
| LTV |
≦15
|
um
|
| TIR |
≦15
|
um
|
| Frontside Surface Roughness |
≦10
|
Å
|
| Backside Surface Roughness |
0.6 ≦ Ra ≦1.2
|
um
|
| Wafer Edge |
R-Type
|
|
| Laser Mark |
Front side
|
|
| Package |
25 wafers in one cassette
|
|
| Other specifications are available upon request. | ||
翻譯
公司資訊
- 統一編號29076957
- 聯絡人姬一龍
- 更多熾燄光電股份有限公司資訊
網頁更新日：
https://www.webseo66.com/web/QA?postID=1040423500mW高功率無線發射模組
規格頻率範圍:315MHz線路架構:S/F工作電壓: 4.5V~5V最大電流: 270mA輸出功率:
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