FM22L16-55-TG IC

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產品內容

4Mbit Ferroelectric Nonvolatile RAM
• Organized as 256Kx16
• Configurable as 512Kx8 Using /UB, /LB
• 100 Trillion (1e14) Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 40MHz
• Advanced High-Reliability Ferroelectric Process
SRAM Compatible
• JEDEC 256Kx16 SRAM Pinout
• 55ns Access Time, 110ns Cycle Time
Advanced Features
• Low VDD Monitor Protects Memory against Inadvertent Writes
• Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
• No Battery Concerns
• Monolithic Reliability
Low Power Operation
• 2.7V – 3.6V Power Supply
• Low Standby Current using /ZZ pin
• 12 mA Active Current
Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 44-pin “Green”/RoHS TSOP-II Package
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration
Ordering Information
• FM22L16-55-TG (55ns access, 44-pin "Green"/RoHS TSOP-II)
• FM22L16-55-TGTR (55ns access, 44-pin "Green"/RoHS TSOP-II, Tape & Reel)
 
If you have any inquiries, please don't hesitate to contact with Trustbond.
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