FM22L16-55-TG IC-台灣黃頁B2B產品網

更新時間：Mon Oct 21 01:00:10 CST 2024

產品內容

4Mbit Ferroelectric Nonvolatile RAM

• Organized as 256Kx16

• Configurable as 512Kx8 Using /UB, /LB

• 100 Trillion (1e14) Read/Write Cycles

• NoDelay™ Writes

• Page Mode Operation to 40MHz

• Advanced High-Reliability Ferroelectric Process

SRAM Compatible

• JEDEC 256Kx16 SRAM Pinout

• 55ns Access Time, 110ns Cycle Time

Advanced Features

• Low VDD Monitor Protects Memory against Inadvertent Writes

• Software Programmable Block Write Protect

Superior to Battery-backed SRAM Modules

• No Battery Concerns

• Monolithic Reliability

Low Power Operation

• 2.7V – 3.6V Power Supply

• Low Standby Current using /ZZ pin

• 12 mA Active Current

Industry Standard Configuration

• Industrial Temperature -40° C to +85° C

• 44-pin “Green”/RoHS TSOP-II Package

• True Surface Mount Solution, No Rework Steps

• Superior for Moisture, Shock, and Vibration

Ordering Information

• FM22L16-55-TG (55ns access, 44-pin "Green"/RoHS TSOP-II)

• FM22L16-55-TGTR (55ns access, 44-pin "Green"/RoHS TSOP-II, Tape & Reel)

If you have any inquiries, please don't hesitate to contact with Trustbond.

網頁更新日：Mon Oct 21 01:00:10 CST 2024

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