產品內容
4 Inch 單拋單氧 wafer 10 PCS
Diameter: 100 mm
Thickeness: 500 ± 25 um
Type/Dopant: N / Boron
Orientation: <100>
Resistivity: 35-40 ohm-cm
Single side polished oxidation : 2um
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8 Inch Prime wafer 12 PCS
Diameter: 200 mm
Thickeness: 725+ / -25 um
Type/Dopant: P / Boron Orientation: <100>
Resistivity: 1以下 ohm-cm
Single side polished
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4 Inch 單拋單氧 wafer 10 PCS
Diameter: 100 mm
Thickeness: 500 ± 25 um
Type/Dopant: N / Boron
Orientation: <100>
Resistivity: 35-40 ohm-cm
Single side polished oxidation : 2um
Silicon wafer
2”4”6”8”12”
Diameter
50.8mm
100mm
150mm
200mm
300mm
Type
P-type or N-type
Dopant
Boron/Arsenic/Phosphorus/Antimony
Orientation
<100>,<110>,<111>
Resistivity
0.0001 ohm-cm ~30K ohm-cm
SOI (Silicon on insulation) wafer
Diameter
3"~8"
Handle Layer Specification
Thickness
250-800μm
Type P or N
Dopant Boron, Sb or Phos. As.
Resistivity 0.001~>1,000Ω-cm
Growth Method CZ or FZ
Orientation<100>,<110>,<111>
Backside finish
Lapped/Etched; Polished
Buried Oxide Specification
Oxide grown on
Handle, Device or Both
BOX thickness0.2-5μm
Device Layer Specification
Thickness2-300μm
Type P or N
Dopant Boron, Sb or Phos. As.
Resistivity 0.001~>1,000Ω-cm
Growth Method CZ or FZ
Orientation <100>,<110>,<111>
Sapphire wafer2”4”6”
Diameter50.8mm100mm150mm
Thicknessstandard
OrientationC, A, R
Warp≦25μm
Bow≦25μm
TTV≦25μm
Front Surface
EPI polished(less than 5A)
Back SurfaceFine grind or polished
Glass / QuartSpecification
Glass Soda Lime/ Borofloat / Eagle XG / Others
Quartz Fused Silica, Quartz Crystal
Size2”~8”, Other shapes and sizes also available
Thickness0.5~1.8 mm, Made-to-order
Surface finish one side or two sides polished
Flatas SEMI. Standard
TTV<= 20 μm
Surface roughness
Ra <= 15 A
LiTaO3 / LiNbO3 Wafer
Black-LT and Black-LN
Specification of Bulk resistivity, Bulk conductivity
Black-LT
Standard Black
Super Black
Bulk Resistivity(Ω-cm)
0.9E+11~9.9E+11
1.0E+11~9.9E+10
Bulk Conductivity(ΩE-1-cmE-1)
1.11E-11~1.11E-12
1.0E-10~1.11E-11
Black-LN
Standard Black
Bulk Resistivity(Ω-cm)
1.0E+10~9.9E+10
Bulk Conductivity(ΩE-1-cmE-1)
1.11E-11~1.11E-12
Typical Specifications
Black-LT wafers
Orientation Diameter(mm) Thickness(mm) Surface finish
(+)plane (-)plane
36 Y-cut
38.7 Y-cut
42 Y-cut
48 Y-cut
X-112 Y-cut 76.2
100.0
0.25
0.35
0.50
Mirror
Polished
Black-LN wafers
Orientation Diameter(mm) Thickness(mm) Surface finish
(+)plane (-)plane
Y-Zcut
41 Y-cut
64 Y-cut
127.86 Y-cut 76.2
100.0
0.25
0.35
0.50 Mirror
Polished
EPI Wafer (Silicon Epitaxial Wafer) / SiC Wafer / GaAs Wafer / InP Wafer / Others
Glass, 玻璃 (Glass), 石英 (Quartz), 矽 (Silicon), 與特殊材料
矽晶圓 Silicon wafer
SOI wafer, CZ & FZ, P & N type, 100 & 111, Low & High resistance, Prime & Test grade.
石英 Quartz
熔融石英 (Fused Silica), 熔凝石英 (Fused Quartz), 紅外線石英 (Low OH).
硼矽酸玻璃 Borosilicate glass
Borofloat 33, Pyrex 7740, D263Teco.
無堿玻璃 Alkaline-Free glass
EXG, AF32, ABC, AN100
鈉鈣玻璃Sodalime glass
3C產品用的電子玻璃, 超白玻璃 B270.
強化玻璃 Toughening glass
Gorilla, Dragontrail.
濾光片Optical filters
UV filter, VIS filter, NIR, SWIR, LWIR filters, BK7
其他 Others
Sapphire (Al2O3), ALN, Ceramics, Diamond wafer, GaN, GaAs, Germanium, Graphene, LiTaO3, LiNbO3, SiC, ZrO2, etc.
晶圓基板,glass carrier 封裝晶圓, 與制程載具
直徑: Dia. 100, 150, 200, 與 300 mm.
表面粗糙度 (Ra):< 0.5 nm (MDF) 或 < 1.5nm (Standard).
拋光等級: 雙面拋光, 單面拋光, 雙面霧化, 單面霧化.
Roun圓形, 方形, 異形, 3D-IC的TSV & TGV interposer, Carrier wafer, GOS (Glass on Silicon), SOG (Silicon on Glass), QOS (Quartz on Silicon), SOQ (Silicon on Quartz), Prime & Test grade Silicon wafer, SOI wafer 等客制化解決方案.
按照SEMI Standard 或是JEITA 加工.
厚度:50μm 到 3000μm.
TTV:< 3 μm.
光學金屬鍍膜光學刻蝕設計
鍍膜: NWIR, LWIR, UV, AR, Cr, Au, Ag, Ti, Cu, Al, Sn等鍍膜可滿足特殊光學需求,
Low Defect 雙面AR鍍膜穿透率 > 99%.
雷射鑽孔切割加工 (In-Between Laser Processing)
化學強化玻璃, 無堿玻璃, 陶瓷, 藍寶石, 氮化鋁, 石英等透明硬脆材料.
穿孔,盲孔,開槽,預切,畫線,切斷.
適合複合材料切割 (玻璃+矽或陶瓷).
可加工超薄材料如厚度50um
90度斷面, 具遮光效果, 可用於玻璃導光板.
切割斷面崩邊 < 10um.
切割道寬度10um,透過縮小切割道可增加材料使用面積.
雷射直接鍵和硼矽酸玻璃, 無堿玻璃, 透明陶瓷, 藍寶石, 石英等同種透明硬脆材料.
高溫高速雷射直接焊接1500mm/s.
直接在材料交界中間燒結, 不需使用膠材, 玻璃粉, 或金屬.
可達到真空氣密封裝, 耐高溫與高壓.
鍵和通道的寬度為30~50um.
不傷材料, 快速鍵和時溫度集中於切割道, 封裝的材料溫度維持室溫.
TGV 填金鍍金 & TSV 絕緣
晶圓尺寸 4吋, 6吋, 8吋, 與12吋.
可應用於半導體(SEMI)與微機電 (MEMS) 3D interposer 制程.
製作低膨脹係數玻璃底材的TGV wafer.
厚度100um, 孔徑最小可達30um.
玻璃材料可使用客戶指定的材料, 選用膨脹係數的材料.
可先製作通孔, 表面鍍金或填充各種導電金屬, 的TGV wafer, 然後與矽晶圓鍵和.
TSV 做好Si導通電極後, 邊緣做SiO2絕緣.
UVA, UVC, UHB LED, OLED 封裝蓋板
材料白玻璃或石英
指紋辨識蓋板 & 封裝底部透明腔體加工
使用強化玻璃, D263, 藍寶石, 石英等材料.
用於指紋辨識Home 鍵封裝蓋板.
搭配光學或是金屬鍍膜.
可提供不同切割形狀, 如圓形或橢圓形.
LED組裝焊錫
公司資訊
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